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SMD Type N-Channel MOSFET 2N7002 SOT-23 MOSFET Unit: mm Features High density cell design for low RDS(ON) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Rugged and reliable High saturation current capability 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Voltage controlled small signal switch 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Drain-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature Symbol VDS ID PD TJ Tstg Rating 60 115 225 150 -55 to 150 Unit V mA mW Electrical Characteristics Ta = 25 Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-threshold voltage Drain-source on-resistance On-state drain current Forward tran conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on Time Turn-off Time Drain-source on-voltage Diode forward voltage Symbol VDSS IDSS lGSS VGS(th) rDS(0n) ID(on) gts Ciss COSS CrSS td(0n) td(off) VDS(on) VSD VDD=25 V, RL=50 ID=500 mA,VGEN=10 V RG=25 VGS=10V, ID=500mA VGS=5V, ID=50mA IS=115 mA, VGS=0 V 0.5 0.05 0.55 VDS=25 V, VGS=0 V, f=1 MHz Testconditons VGS=0 V, ID=10 A VDS=60 V, VGS=0 V VDS=0 V, VGS= 25 V VDS=VGS, ID=250 A VGS=10 V, ID=500 mA VGS=5 V, ID=50 mA VGS=10 V, VDS=7 V VDS=10 V, ID=200 mA 1 1 1 500 80 500 50 25 5 20 ns 40 3.75 0.375 1.2 V V V pF Min 60 80 80 2.5 7.5 7.5 mA ms Typ Max Unit V nA nA V Marking Marking 702 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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